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Freescale Semiconductor Technical Data
Document Number: MRF6S27085H Rev. 3, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 20 Watts Avg., f = 2660 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 23.5% ACPR @ 885 kHz Offset -- - 48 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S27085HR3 MRF6S27085HSR3
2600- 2700 MHz, 20 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S27085HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S27085HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 85 W CW Case Temperature 76C, 20 W CW Symbol RJC Value (2,3) 0.50 0.56 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
MRF6S27085HR3 MRF6S27085HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3A (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.8 -- pF VGS(th) VGS(Q) VDS(on) 1 2 -- 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg. N - CDMA, f = 2660 MHz, Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D ACPR IRL 14 21 -- -- 15.5 23.5 - 48 - 13 17 -- - 45 -9 dB % dBc dB
MRF6S27085HR3 MRF6S27085HSR3 2 RF Device Data Freescale Semiconductor
B1 VBIAS + C11 + C10 C9 C8
L1 B2 C3 R1 Z9 Z10 Z11 Z12 Z13 Z14 Z15 C2 DUT Z16 RF OUTPUT C4 C5 + C6 + C7 VSUPPLY
RF INPUT
Z1
Z2 C1
Z3
Z4
Z5
Z6
Z7
Z8
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.672 x 0.081 Microstrip 0.050 x 0.250 Microstrip 0.288 x 0.081 Microstrip 0.200 x 0.480 Microstrip 0.270 x 0.172 Microstrip 0.260 x 0.810 Microstrip 0.366 x 0.490 Microstrip 0.083 x 0.490 Microstrip 0.091 x 0.753 Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB
0.287 x 0.753 Microstrip 0.220 x 0.384 Microstrip 0.122 x 0.580 Microstrip 0.266 x 0.148 Microstrip 0.130 x 0.425 Microstrip 0.380 x 0.081 Microstrip 0.703 x 0.081 Microstrip Arlon GX - 0300- 5022, 0.030, r = 2.5
Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values
Part B1 B2 C1, C2 C3 C4 C5, C8 C6 C7 C9 C10 C11 L1 R1 Description Ferrite Bead, Surface Mount Ferrite Bead, Surface Mount 4.7 pF Chip Capacitors 3.6 pF Chip Capacitor 10 F, 50 V Chip Capacitor 2.2 F, 50 V Chip Capacitors 47 F, 50 V Electrolytic Capacitor 330 F, 63 V Electrolytic Capacitor 0.01 F Chip Capacitor 22 F, 25 V Tantalum Capacitor 47 F, 16 V Tantalum Capacitor 15 nH, Chip Inductor 3.3 W, 1/3 W Chip Resistor Part Number 2508051107Y0 2743019447 ATC100B4R7CT500XT ATC100B3R6CT500XT GRM55DR61H106KA88B C1825C225J5RAC EMVK500ADA470MF80G EKMG630ELL331MJ20S C1825C103J1RAC T491D226K025AT T491D476K016AT L0603150GGW CRCW12103R30FKEA Manufacturer Fair- Rite Fair- Rite ATC ATC Murata Kemet United Chemi - Con United Chemi - Con Kemet Kemet Kemet AVX Vishay
MRF6S27085HR3 MRF6S27085HSR3 RF Device Data Freescale Semiconductor 3
C5 C11 C10 B2 R1 C3 C6 B1* L1* C8* C9* C4
C7
C1 CUT OUT AREA
C2
MRF6S27085 Rev. 3
* Components stacked
Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout
MRF6S27085HR3 MRF6S27085HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) -10 -12 -14 -16 -18 -20 -22 -24 -26 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -10 -12 -14 -16 -18 -20 -22 -24 -26 ACPR (dBc), ALT1 (dBc) 16.2 16 VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 900 mA, Single-Carrier N-CDMA 15.8 15.6 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% 15.4 Probability (CCDF) 15.2 15 14.8 ACPR ALT1 D 25 24 23 22 Gps IRL -42 -46 -50 -54
Gps, POWER GAIN (dB)
14.6 -58 2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700 f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ 20 Watts Avg.
15.2 15 Gps, POWER GAIN (dB) 14.8 14.6 14.4 14.2 14 13.8
D Gps
38 VDD = 28 Vdc, Pout = 45 W (Avg.) IDQ = 900 mA, Single-Carrier N-CDMA 36 1.2288 MHz Channel Bandwidth 34 PAR = 9.8 dB @ 0.01% 32 Probability (CCDF) -32 -36
IRL ACPR
-40 -44
-48 13.6 2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700 f, FREQUENCY (MHz)
ALT1
Figure 4. Single - Carrier N - CDMA Broadband Performance @ 45 Watts Avg.
18 17 Gps, POWER GAIN (dB) 16 900 mA 15 675 mA 14 13 12 1 VDD = 28 Vdc f1 = 2643.75 MHz, f2 = 2646.25 MHz Two-Tone Measurements 2.5 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 IDQ = 1340 mA 1240 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-20
-30
VDD = 28 Vdc f1 = 2643.75 MHz, f2 = 2646.25 MHz Two-Tone Measurements 2.5 MHz Tone Spacing IDQ = 440 mA
IRL, INPUT RETURN LOSS (dB) 1340 mA
-40
IRL, INPUT RETURN LOSS (dB)
1240 mA -50 900 mA -60 0.1 675 mA 1 10 100 300
440 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S27085HR3 MRF6S27085HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
0 IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 0.1 3rd Order 5th Order VDD = 28 Vdc, Pout = 85 W (PEP), IDQ = 900 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2645 MHz 56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 47 46 1 10 100 30 31 32 33 34 35 36 37 38 39 40 TWO-TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 900 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2645 MHz P1dB = 51 dBm (126.74 W) Actual P3dB = 51.72 dBm (148.54 W) Ideal
7th Order
Figure 7. Intermodulation Distortion Products versus Tone Spacing
Figure 8. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
45 40 35 30 25 20 Gps 15 10 5 10 Pout, OUTPUT POWER (WATTS) AVG. W-CDMA VDD = 28 Vdc, IDQ = 900 mA, f = 2645 MHz Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) ACPR D ALT1
-30 -35 ACPR (dBc), ALT1 (dBc) -40 -45 -50 -55 -60 -65 -70 100
Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
20 17.5 Gps, POWER GAIN (dB) 15 12.5 10 7.5 5 2.5 0 10 Pout, OUTPUT POWER (WATTS) CW D Gps 45 40 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 35 30 25 20 15 VDD = 28 Vdc, IDQ = 900 mA f = 2645 MHz 10 15 32 V 14 28 V 13 VDD = 24 V 12 IDQ = 900 mA f = 2645 MHz 11 1 10 Pout, OUTPUT POWER (WATTS) CW 100 16
5 100
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S27085HR3 MRF6S27085HSR3 6
Figure 11. Power Gain versus Output Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 20 W Avg., and D = 23.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 (dB) 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. ALT1 Measured in 12.5 kHz Bandwidth @ 1.25 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW .. . ................ ...... .... ...... ... ............. ......... ....... .. . . . . . . . +ALT1 in 12.5 kHz . -ALT1 in 12.5 kHz .. . . Integrated BW . . Integrated BW . . . . . . . . . . . . .... . .. ... .. .............. ......... ...... . ............. . ...... ... .. . . ... . . .. ........ .... ..... ......... . ..... .. ..... ...... ... . . ....... ... . ... .. ..... .. .... ..... ... ...... . . ..... ......... ....... .... .. .. ...... ... ... ...... -ACPR in 30 kHz ..... .. ..... ...... +ACPR in 30 kHz ........... .... .... .. ..... .. ........... . ....... ........... ....... . Integrated BW Integrated BW ........... .. .. ..... ......... .. .......... ... .. ..... . . ...
Figure 13. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 14. Single - Carrier N - CDMA Spectrum
MRF6S27085HR3 MRF6S27085HSR3 RF Device Data Freescale Semiconductor 7
Zsource Zload f = 2600 MHz f = 2700 MHz f = 2700 MHz f = 2600 MHz
Zo = 10
VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg. f MHz 2600 2610 2620 2630 2640 2645 2650 2660 2670 2680 2690 2700 Zsource 8.55 - j5.42 8.31 - j5.30 8.21 - j5.10 8.21 - j4.85 8.26 - j4.57 8.40 - j4.43 8.44 - j4.32 8.78 - j4.29 8.94 - j4.59 8.88 - j5.01 8.57 - j5.18 8.36 - j5.10 Zload 5.86 - j4.34 5.69 - j4.26 5.64 - j4.15 5.67 - j4.00 5.72 - j3.83 5.80 - j3.75 5.86 - j3.70 6.10 - j3.72 6.19 - j4.00 6.07 - j4.36 5.80 - j4.48 5.71 - j4.47
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF6S27085HR3 MRF6S27085HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF6S27085HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF6S27085HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF6S27085HR3 MRF6S27085HSR3 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 3 Date Dec. 2008 Description * Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 * Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 * Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added "Measured in Functional Test", On Characteristics table, p. 2 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Changed minimum drain efficiency specification from 22% to 21% to match production test limits, Table 4, Functional Tests, p. 2 * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 * Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Added Product Documentation and Revision History, p. 10
MRF6S27085HR3 MRF6S27085HSR3 10 RF Device Data Freescale Semiconductor
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MRF6S27085HR3 MRF6S27085HSR3
Document Number: RF Device Data MRF6S27085H Rev. 3, 12/2008 Freescale Semiconductor
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